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通常，采用SiO2摻雜或A12O3、SiO2和TiO2共同摻雜的方法，使一般化學試劑或工業原料在空氣中燒成，便可制得半導化良好的BaTiO3陶瓷異鞍環，且摻雜的范圍較寬，重復性也較好。制備BaTiO3半導體陶瓷．在注意原料和配方的同時，還應嚴格控制配套的工藝。
影響BaTiO3陶瓷半導化的因素主要有加人物和雜質、化學計量偏離率、燒成及冷卻條件等。加入物摻雜濃度對BaTiO3陶瓷的電阻率有直接的影響，因此通常控制在一定的濃度范圍內。生產蜂窩陶瓷載體中也往往需要把陶瓷材料的居里峰移至需要的溫度。
燒成溫度、保溫時間、燒成時的氣氛、冷卻時的氣氛和冷卻速度等都影響BaTiO3陶瓷的電阻率。于施主摻雜的高純BaTiO3瓷料來說，在缺氧氣氛中燒成時，不僅可以實現陶瓷材料的更充分半導化，而巳往往可以有效地拉寬促使陶瓷半導化的施主摻雜的濃度范圍。保溫時間延長，陶瓷材料的電阻率逐漸升高。（圖/文hytlfdc.com）
中譯英：
 Usually, doping with SiO2 or A12O3, SiO2 and TiO2 doping method, so that the general chemical reagents or industrial raw materials sintered in the atmosphere, then preparing semi-conductive good BaTiO3 ceramic super saddle ring, and doped in wide range, repeatability is good. Preparation of BaTiO3 semiconductor ceramics. In attention to raw materials and formula at the same time, we should strictly control matching technology.

Effects of BaTiO3 ceramic semiconducting main factors and characters and impurities, stoichiometric deviation rate, sintering and cooling conditions. Adding material doping concentration of BaTiO3 ceramics resistivity has a direct impact, so usually controlled in a certain range of concentration. The production of ceramic honeycomb carrier is often need to ceramic material to the desired temperature of Mont Curie.